All wafers are produced from low stress high purity, LED grade HEM grown sapphire with a uniform crystalline structure, free of subgrains, bubbles and inclusions. This results in superior performance in downstream MOCVD processing with thin films and increased yields.
|2” Wafer||4” Wafer||6” Wafer|
|Material||>99.999% Al2O3||>99.999% Al2O3||>99.999% Al2O3|
|Orientation||(C-A) ±0.1° / (C-M) ±0.1°||(C-A) ±0.1° / (C-M) ±0.1°||(C-A) ±0.1° / (C-M) ±0.1°|
|Primary Flat Location||A-axis ±0.2°||A-axis ±0.2°||A-axis ±0.2°|
|Diameter||50± 0.05mm||100± 0.1mm||150± 0.2mm|
|Thickness||430 μm ± 10μm||650 μm ± 20μm|
|Primary Flat Length||16 ± 0.5mm||16 ± 0.5mm||16 ± 0.5mm|
|Front Surface||Ra < 0.2nm, epi-ready polished||Ra < 0.2nm, epi-ready polished||Ra < 0.2nm, epi-ready polished|
|Back Surface||Ra = 1.0nm ± 0.2μm||Ra = 1.0nm ± 0.2μm||Ra = 1.0nm ± 0.2μm|
|Edge Status||No broken edge||No broken edge||No broken edge|
|Package||Clean Room, Nitrogen Atmosphere||Clean Room, Nitrogen Atmosphere||Clean Room, Nitrogen Atmosphere|
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